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| DATA SHEET MPS712 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS712 is a silicon PNP Darlington Transistor, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ,Tstg JA 80 60 10 800 2.0 1.0 -65 to +150 125 UNITS V V V mA A W C C/W ELECTRICAL CHARACTERISTICS (TA=25C) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE TEST CONDITIONS VCB=60V VEB=8.0V IC=10A IC=10mA IE=10A IC=800mA, IB=8.0mA VCE=5.0V, IC=800mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500mA 5K 10K MIN MAX 100 100 80 60 10 1.25 1.80 UNITS nA nA V V V V V (SEE REVERSE SIDE) R0 MPS712 PNP DARLINGTON TRANSISTOR TO-92 PACKAGE - MECHANICAL OUTLINE A B 123 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) 1) Emitter 2) Base 3) Collector C SYMBOL A (DIA) B C D E F G H I D E F G H Lead Code: I R1 |
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